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- USA
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Ships within 48 hours · Estimated delivery Aug 26 - Aug 31
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Description
Bag Type: Moisture Barrier
YAGEO - CC0603KRX7R0BB104 - SMD Multilayer Ceramic Capacitor
Input Voltage Min: 8V
LED Case Size: 3mm x 1mm
Attenuation @ 1GHz: 86
IXFN360N10T MOSFET Module, N-Ch, 100V, 360A IXYS Semiconductor Bag Type: Moisture BarrierIXYS SEMICONDUCTOR IXFN360N10T MOSFET Transistor, GigaMOS, N Channel, 360 A, 100 V, 0. 0026 ohm, 100 V, 4. 5 V, SOT 227B Transistor Polarity: N Channel Continuous Drain Current Id: 360A Drain Source Voltage Vds: 100V On Resistance Rds(on): 0. 0026ohm Rds(on) Test Voltage Vgs: 100V Threshold Voltage Vgs: 4. 5V Power Dissipation Pd: 830W Operating Temperature Max: 175C Product Range: Trench HiperFET Series SVHC: No SVHC (07 Jul 2017)
Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
- To process your return/exchange, please contact us at [email protected]
- Please click here for more details>>> Return & Exchange Policy
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